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Oussama Moutanabbir
Department of Engineering Physics, École Polytechnique de Montréal, Montréal, Canada

Abstract

This presentation will describe the basic properties of (Si)GeSn semiconductors and outline strategies to exploit them to extend the capabilities of silicon-compatible devices and discuss physics and engineering concepts to achieve silicon-integrated mid-infrared optoelectronics and quantum technologies. (Si)GeSn alloys constitute isovalent substitution of group-IV elements in cubic diamond-structured (Si)Ge lattices. This emerging family of semiconductors provides strain and composition as two degrees of freedom to independently engineer the lattice parameter and the band structure, in a similar fashion to the mature compound semiconductors. We will show that these new capabilities can be introduced to engineer scalable and monolithic SWIR and MWIR photodetectors and light-emitters. We will also demonstrate new platforms based on (Si)GeSn low-dimensional systems to achieve a selective confinement of light-holes, thus laying the groundwork toward coherent photon-spin interfaces needed for a direct mapping of the quantum information encoded in photon flying qubits to stationary spin processor.  

Bio

Oussama Moutanabbir is Professor of Engineering Physics holding a Canada Research Chair in Nanoscale and Quantum Semiconductors. Before taking the position in Montreal, he was Project Leader at the Max Planck Institute of Microstructure Physics (Germany) and held a joint appointment as Invited Researcher at RIKEN Institute of Advanced Science (Japan). He is the Director of POLYAPT – a newly established multi-institutional center for atom probe tomography. He is currently leading a national network on compact mid-infrared and terahertz photonics funded by Defence Canada through its program Innovation for Defence Excellence and Security. His collaborative work with Université de Sherbrooke and Teledyne-Dalsa, leading to the development and commercialization of uncooled thermal cameras, received the 2015 ADRIQ’s Innovation Award, the 2015 ADRIQ’s University-Industry Partnership Award, and the 2019 NSERC’s Synergy Award. He is also the recipient of the 2022 Leibniz IKZ International Award for his contributions to the field of group IV semiconductors.